Method of Manufacturing Semiconductor Device

ABSTRACT

A method forms a film on a substrate to have different film thicknesses and features within a plane of the substrate and improves the manufacturing throughput. The method comprises: (a) supplying a first process gas from above a substrate and a second process gas from a lateral direction with respect to the substrate; and (b) supplying a first reactive gas from above the substrate and a second reactive gas from the lateral direction with respect to the substrate, wherein at least one of (a) and (b) is performed at least once in a manner that a total amount of the first and second process gases supplied to the substrate center is different from that of the first and second process gases supplied to the substrate periphery.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.14/490,882 filed Sep. 19, 2014, entitled “Substrate ProcessingApparatus, Method of Manufacturing Semiconductor Device andNon-Transitory Computer Readable Recording Medium,” which claims foreignpriority under 35 U.S.C. §119(a)-(d) to Application No. JP 2014-170371filed on Aug. 25, 2014, the entire contents of which are herebyincorporated by reference.

FIELD OF THE INVENTION

The present invention relates to a substrate processing apparatus, amethod of manufacturing a semiconductor device and a non-transitorycomputer readable recording medium.

BACKGROUND

As the integration degree of a large-scale integrated circuit(hereinafter referred to as “LSI”) becomes higher, a circuit patternbecomes finer.

A device should be formed in a small size to accommodate a large numberof semiconductor devices in a narrow area. To this end, the widths ofand distances between patterns that are to be formed should be set to besmall.

Recently, as a circuit pattern becomes finer, filling a fine structureand particularly, filling a structure having a gap (groove), which isdeep in the vertical direction or that is narrow in the horizontaldirection, with an oxide by chemical vapor deposition (CVD) has becometechnically limited. Also, it has been difficult to uniformly etch orprocess a substrate having a groove that is deep in the verticaldirection by chemical mechanical polishing (CMP). Also, in order toincrease the yield of a semiconductor device, it has been required toreduce a process time for each substrate and a process time for a wholemanufacturing process of a semiconductor device.

Also, in order to increase the yield of the whole manufacturing processof a semiconductor device, it has been required to differently process acenter portion and a peripheral portion of a substrate during a filmforming process.

Recently, a semiconductor device, a representative example of which isan LSI, a dynamic random access memory (DRAM) or a flash memory has beendeveloped to have a minimum processing dimension of less than 30 nm inwidth and a thin film thickness. Thus, it has become difficult to form afine semiconductor device, improve the manufacturing throughput, oruniformly process a substrate while maintaining the quality thereofconstant.

SUMMARY

It is an object of the present invention to provide a substrateprocessing apparatus capable of forming a film on a substrate to havedifferent thicknesses and features within a plane of the substrate andimproving the manufacturing throughput, a method of manufacturing asemiconductor device, and a non-transitory computer readable recordingmedium.

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a processing chamberaccommodating a substrate; a first process gas supply unit configured tosupply a first process gas from above the substrate; a first reactivegas supply unit configured to supply a first reactive gas from above thesubstrate; a second process gas supply unit configured to supply asecond process gas from a lateral direction with respect to thesubstrate; a second reactive gas supply unit configured to supply asecond reactive gas from the lateral direction with respect to thesubstrate; and a control unit configured to control the first processgas supply unit, the second process gas supply unit, the first reactivegas supply unit, and the second reactive gas supply unit to: (a) supplythe first process gas from above the substrate and the second processgas from the lateral direction with respect to the substrate; and (b)supply the first reactive gas from above the substrate and the secondreactive gas from the lateral direction with respect to the substrate,wherein each of the steps (a) and (b) is performed at least once in amanner that: a total amount of the first process gas and the secondprocess gas supplied to a center portion of the substrate is differentfrom that of the first process gas and the second process gas suppliedto a peripheral portion of the substrate; or a total amount of the firstreactive gas and the second reactive gas supplied to the center portionof the substrate is different from that of the first reactive gas andthe second reactive gas supplied to the peripheral portion of thesubstrate in at least one of the steps (a) and (b).

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, the method including:(a) supplying a first process gas from above a substrate and a secondprocess gas from a lateral direction with respect to the substrate; and(b) supplying a first reactive gas from above the substrate and a secondreactive gas from the lateral direction with respect to the substrate,wherein each of the steps (a) and (b) is performed at least once in amanner that a total amount of the first process gas and the secondprocess gas supplied to a center portion of the substrate is differentfrom that of the first process gas and the second process gas suppliedto a peripheral portion of the substrate; or a total amount of the firstreactive gas and the second reactive gas supplied to the center portionof the substrate is different from that of the first reactive gas andthe second reactive gas supplied to the peripheral portion of thesubstrate in at least one of the steps (a) and (b).

According to another aspect of the present invention, there is provideda non-transitory computer readable recording medium causing a computerto perform: (a) supplying a first process gas from above a substrate anda second process gas from a lateral direction with respect to thesubstrate; and (b) supplying a first reactive gas from above thesubstrate and a second reactive gas from the lateral direction withrespect to the substrate, wherein each of the sequences (a) and (b) isperformed at least once in a manner that a total amount of the firstprocess gas and the second process gas supplied to a center portion ofthe substrate is different from that of the first process gas and thesecond process gas supplied to a peripheral portion of the substrate; ora total amount of the first reactive gas and the second reactive gassupplied to the center portion of the substrate is different from thatof the first reactive gas and the second reactive gas supplied to theperipheral portion of the substrate in at least one of the sequences (a)and (b).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram of a substrate processingapparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a controller according toan embodiment of the present invention.

FIG. 3 is a flowchart of a substrate processing process according to anembodiment of the present invention.

FIG. 4 is a diagram illustrating a sequence of supplying a gas accordingto an embodiment of the present invention.

FIG. 5 is a graph illustrating a distribution of thicknesses of a filmformed on a substrate according to an embodiment of the presentinvention.

FIG. 6 is a diagram illustrating a sequence of supplying a gas accordingto another embodiment of the present invention.

FIG. 7 is a diagram illustrating a sequence of supplying a gas accordingto another embodiment of the present invention.

FIG. 8 is a diagram illustrating a sequence of supplying a gas accordingto another embodiment of the present invention.

FIG. 9 is a schematic configuration diagram of a substrate processingapparatus according to a second embodiment of the present invention.

FIG. 10 is a schematic configuration diagram of a substrate processingapparatus according to a third embodiment of the present invention.

FIG. 11 is a schematic configuration diagram of a substrate processingapparatus according to a third embodiment of the present invention.

FIG. 12 is a diagram illustrating a sequence of supplying a gasaccording to another embodiment of the present invention.

FIG. 13 is a diagram illustrating a sequence of supplying a gasaccording to another embodiment of the present invention.

FIGS. 14A and 14B are diagrams illustrating stacked structures ofmultiple films according to various embodiments of the presentinvention.

FIG. 15 is a diagram illustrating a sequence of supplying a gasaccording to another embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments of the present invention will bedescribed.

First Embodiment

A first embodiment of the present invention will be described withreference to the accompanying drawings below.

(1) Structure of Substrate Processing Apparatus

First, a substrate processing apparatus 100 according to the firstembodiment will be described.

The substrate processing apparatus 100 according to the presentembodiment will now be described. The substrate processing apparatus 100is a unit configured to form an insulating film, a metal film, or thelike and is configured as a single-wafer type substrate processingapparatus as illustrated in FIG. 1.

Referring to FIG. 1, the substrate processing apparatus 100 includes aprocess container 202. The process container 202 is configured, forexample, as an airtight container having a flat cylindrical circularcross-section. Also, the process container 202 is formed, for example,of a metal material, e.g., aluminum (Al) or stainless steel(steel-use-stainless (SUS)) or quartz. In the process container 202, aprocess space (processing chamber) 201 for processing a wafer 200, suchas a silicon wafer, serving as a substrate, and a transfer space 203 areformed. The process container 202 is configured by an upper container202 a, a lower container 202 b, a quartz container 202 c and a lid 202d. A space that is surrounded by the upper container 202 a, the quartzcontainer 202 c and the lid 202 d and located above a substrate placingtable 212 will be hereinafter referred to as a ‘process space 201’, anda space that is surrounded by the lower container 202 b and locatedbelow the substrate placing table 212 will be hereinafter referred to asthe ‘transfer space 203’.

At a side of the lower container 202 b, a substrate loading exit 206 isinstalled adjacent to a gate valve 205. The wafer 200 is moved betweenadjacent transfer chambers (not shown) via the substrate loading exit206. A plurality of lift pins 207 are installed on a bottom portion ofthe lower container 202 b. Also, the lower container 202 b is connectedto an earth potential source.

In the process space 201, a substrate support unit 210 is installed tosupport the wafer 200. The substrate support unit 210 mainly includes aplacing surface 211 on which the wafer 200 is placed, the substrateplacing table 212 having the placing surface 211 on a surface thereof,and a heater 213 serving as a heating unit included in the substrateplacing table 212. In the substrate placing table 212, through-holes 214through which the lift pins 207 pass are installed in locationscorresponding to the lift pins 207.

The substrate placing table 212 is supported by a shaft 217. The shaft217 passes through a bottom portion of the process container 202 and isconnected to a lifting mechanism 218 outside the process container 202.By lifting the shaft 217 and the substrate placing table 212 byoperating the lifting mechanism 218, the wafer 200 placed on the placingsurface 211 may be moved upward. Also, the circumference of a lower endportion of the shaft 217 is covered with a bellows 219 and the inside ofthe process container 202 is maintained in an airtight state.

The substrate placing table 212 is moved downward to the substratesupport unit 210 to move the placing surface 211 to the substrateloading exit 206 (i.e., a wafer transfer position) so as to transfer thewafer 200, and is moved upward to move the wafer 200 to a processingposition in the process space 201 (i.e., a wafer processing position) soas to process the wafer 200 as illustrated in FIG. 1.

In detail, when the substrate placing table 212 is moved downward to thewafer transfer position, upper end portions of the lift pins 207protrude from an upper surface of the placing surface 211 to support thewafer 200 with the lift pins 207 from below. When the substrate placingtable 212 is moved upward to the wafer processing position, the liftpins 207 are buried from the upper surface of the placing surface 211 sothat the wafer 200 may be supported by the placing surface 211 frombelow. Also, the lift pins 207 are in direct contact with the wafer 200and are thus preferably formed of, for example, quartz or alumina.

[Activation Unit]

A coil 250 a is installed as an activation unit near the quartzcontainer 202 c. A variable condenser 250 d and a high-frequency powersource 250 c are connected to the coil 250 a via an insulationtransformer 250 e. By supplying high-frequency power to the coil 250 a,a gas supplied into the processing chamber 201 may be excited togenerate plasma.

[Exhaust System]

An exhaust port 221 serving as a first exhaust unit for exhausting anatmosphere in the processing chamber 201 is installed on an inner wallof the transfer space 203 (the lower container 202 b). The exhaust port221 is connected to an exhaust pipe 222. A pressure adjuster 223 such asan auto pressure controller (APC) configured to control the inside ofthe processing chamber 201 to have a predetermined pressure and a vacuumpump 224 are sequentially connected in series to the exhaust pipe 222.An exhaust system (exhaust line) mainly includes the exhaust port 221,the exhaust pipe 222, and the pressure adjuster 223. The vacuum pump 224may be further included in the exhaust system (exhaust line).

[Upper Gas Introduction Port]

An upper gas introduction port 241 a is installed at an upstream end ofa gas rectification unit 234 installed at an upper portion of theprocess space 201 to provide various gases into the process space 201.

[Upper Gas Supply Unit]

A common gas supply pipe 242 is connected to the upper gas introductionport 241 a installed at the upstream end of the gas rectification unit234. A first process gas supply pipe 243 a, a first reactive gas supplypipe 244 a, a first purge gas supply pipe 245 a and a cleaning gassupply pipe 248 a are connected to the common gas supply pipe 242.

A first-element containing gas (first process gas) is mainly suppliedfrom a first process gas supply unit including the first process gassupply pipe 243 a). A second-element containing gas (first reactive gas)is mainly supplied from a second process gas supply unit including thefirst reactive gas supply pipe 244 a. A purge gas is mainly suppliedfrom a first purge gas supply unit including the first purge gas supplypipe 245 a when a wafer is processed, and a cleaning gas is mainlysupplied from the first purge gas supply unit when the processingchamber 201 is cleaned.

[First Process Gas Supply Unit]

At the first process gas supply pipe 243 a, a first process gas source243 b, a mass flow controller (MFC) 243 c which is a flow ratecontroller (flow rate control unit) and a valve 243 d which is anopening/closing valve are sequentially installed from an upstreamdirection.

A gas containing a first element (first process gas) is supplied fromthe first process gas source 243 b, and supplied to a gas rectificationunit 234 via the MFC 243 c, the valve 243 d, the first process gassupply pipe 243 a and the common gas supply pipe 242.

The first process gas is a source gas, i.e., one of the process gases.Here, the first element is, for example, silicon (Si). That is, thefirst process gas is, for example, a silicon-containing gas. Forexample, dichlorosilane (SiH2Cl2, abbreviated as ‘DCS’) gas may be usedas silicon-containing gas. A source of the first process gas may have asolid, liquid, or gaseous state at normal temperature and pressure. Whenthe first process gas has a liquid state at normal temperature andpressure, a vaporizer (not shown) may be installed between the firstprocess gas source 243 b and the MFC 243 c. Here, it is assumed that thesource is in a gaseous state.

[First Carrier Gas Supply Unit]

A downstream end of a first carrier gas supply pipe 246 a is connectedto the first process gas supply pipe 243 a at a downstream side of thevalve 243 d. A carrier gas source 246 b, an MFC 246 c which is a flowrate controller (flow rate control unit) and a valve 246 d which is anopening/closing valve are sequentially installed to the first carriergas supply pipe 246 a from an upstream direction. A first carrier gassupply unit includes at least the first carrier gas supply pipe 246 a,the MFC 246 c and the valve 246 d.

Here, a carrier gas is, for example, nitrogen (N₂) gas. In addition tothe N₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne)gas, or argon (Ar) gas may be used as the carrier gas. The carrier gasacts as a carrier gas, a dilution gas, or a purge gas in a film formingprocess (operations S203 to S207).

A first-element containing gas supply unit (which may be also referredto as a silicon-containing gas supply unit) mainly includes the firstprocess gas supply pipe 243 a, the MFC 243 c and the valve 243 d.

The carrier gas source 246 b and the first process gas supply pipe 243 amay be further included in the first carrier gas supply unit.

The first process gas source 243 b and the first carrier gas supply unitmay be further included in the first-element containing gas supply unit.

[First Reactive Gas Supply Unit]

A first reactive gas source 244 b, an MFC 244 c which is a flow ratecontroller (flow rate control unit) and a valve 244 d which is anopening/closing valve are sequentially installed at an upstream end ofthe first reactive gas supply pipe 244 a from the upstream side.

A gas containing a second element (hereinafter referred to as a ‘firstreactive gas’) is supplied from the first reactive gas source 244 b andsupplied to the gas rectification unit 234 via the MFC 244 c, the valve244 d, the first reactive gas supply pipe 244 a and the common gassupply pipe 242.

The first reactive gas is one of the process gases. The first reactivegas may be considered as a modifying gas.

Here, the first reactive gas contains a second element that is differentfrom the first element. The second element includes, for example, atleast one among oxygen (O), nitrogen (N), carbon (C) and hydrogen (H)which are elements that are likely to react with (or be bound to) thefirst element. In the present embodiment, the first reactive gas is, forexample, a nitrogen-containing gas. In detail, ammonia (NH₃) gas is usedas the nitrogen-containing gas.

A first reactive gas supply unit mainly includes the first reactive gassupply pipe 244 a, the MFC 244 c and the valve 244 d.

[Second Carrier Gas Supply Unit]

A downstream end of a second carrier gas supply pipe 247 a is connectedto the first reactive gas supply pipe 244 a at a downstream side of thevalve 244 d. A carrier gas source 247 b, an MFC 247 c which is a flowrate controller (flow rate control unit) and a valve 247 d which is anopening/closing valve are sequentially installed at the second carriergas supply pipe 247 a from the upstream direction. A second carrier gassupply unit includes at least the second carrier gas supply pipe 247 a,the MFC 247 c and the valve 247 d.

A carrier gas is supplied to the gas rectification unit 234 from thesecond carrier gas supply pipe 247 a via the MFC 247 c, the valve 247 dand the first reactive gas supply pipe 247 a.

The carrier gas source 247 b and the first reactive gas supply pipe 244a may be further included in the second carrier gas supply unit.

The first reactive gas source 244 b and the second carrier gas supplyunit may be further included in the first reactive gas supply unit.

[First Purge Gas Supply Unit]

A first purge gas source 245 b, an MFC 245 c which is a flow ratecontroller (flow rate control unit) and a valve 245 d which is anopening/closing valve are sequentially installed at the first purge gassupply pipe 245 a from the upstream direction.

An inert gas is supplied as a purge gas from the first purge gas source245 b, and supplied to the gas rectification unit 234 via the MFC 245 c,the valve 245 d, the first purge gas supply pipe 245 a and the commongas supply pipe 242.

Here, the inert gas is, for example, nitrogen (N₂) gas. In addition tothe N₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne)gas, or argon (Ar) gas may be used as the inert gas.

A first purge gas supply unit (which is also referred to as a purge gassupply unit) mainly includes the first purge gas supply pipe 245 a, theMFC 245 c and the valve 245 d.

The inventors of the present invention have found that the degree offlatness of a semiconductor device to be finally formed can be improvedby forming a film on the wafer 200 such that the thickness or quality ofthe film is different, for example, at a center portion and a peripheralportion of the wafer 200 during processing of the wafer 200 even whenthe uniformity of the wafer 200 processed in an etching process or a CMPprocess performed after the forming of the film is different at thecenter portion and the peripheral portion of the wafer 200.

A structure of an apparatus that enables to form a film such that thethickness or quality of the film is different at the center portion andthe peripheral portion of the wafer 200 will be described below.

[Flank Gas Introduction Port]

As illustrated in FIG. 1, flank gas introduction ports 241 b and 241 cmay be installed at side surfaces of the upper container 202 a and arate of the amounts of gases to be supplied via the upper gasintroduction port 241 a and the flank gas introduction ports 241 b and241 c may be changed to form a film such that the thickness or qualityof the film is different at the center portion and the peripheralportion of the wafer 200. The flank gas introduction ports 241 b and 241c are installed to surround around the wafer 200. A second process gassupply pipe 243 e is connected to the flank gas introduction port 241 b,and a second reactive gas supply pipe 244 e is connected to the flankgas introduction port 241 c.

[Second Process Gas Supply Unit]

A second process gas source 243 f, an MFC 243 g and a valve 243 h aresequentially installed at the second process gas supply pipe 243 e fromthe upstream direction.

A gas containing the first element described above is supplied from thesecond process gas source 243 f, and supplied to the flank gasintroduction port 241 b via the MFC 243 g, the valve 243 h and thesecond process gas supply pipe 243 e. A second process gas is suppliedalong the outer circumference of the wafer 200 via the gas introductionport 241 b.

The second process gas is similar to the first process gas describedabove. Also, the second process gas may be a gas containing a thirdelement that is different from the first element.

[Third Carrier Gas Supply Unit]

A downstream end of a third carrier gas supply pipe 246 e is connectedto the second process gas supply pipe 243 e at a downstream side of thevalve 243 h. A carrier gas source 246 f, an MFC 246 g and a valve 246 hare sequentially installed at the third carrier gas supply pipe 246 efrom the upstream direction. A third carrier gas supply unit includes atleast the third carrier gas supply pipe 246 e, the MFC 246 g, and thevalve 246 h.

The second process gas supply unit mainly includes the second processgas supply pipe 243 e, the MFC 243 g and the valve 243 h.

Also, the second process gas supply unit may include the third carriergas supply unit.

[Second Reactive Gas Supply Unit]

A second reactive gas source 244 f, an MFC 244 g and a valve 244 h aresequentially installed at the second reactive gas supply pipe 244 e fromthe upstream direction.

A gas containing the second element described above is supplied from thesecond reactive gas source 244 f and supplied to the flank gasintroduction port 241 c via the MFC 244 g, the valve 244 h and thesecond reactive gas supply pipe 244 e.

[Fourth Carrier Gas Supply Unit]

A downstream end of a fourth carrier gas supply pipe 247 e is connectedto the second reactive gas supply pipe 244 e at a downstream side of thevalve 244 h. A carrier gas source 247 f, an MFC 247 g and a valve 247 hare sequentially installed at the fourth carrier gas supply pipe 247 efrom the upstream direction.

A fourth carrier gas supply unit mainly includes the fourth carrier gassupply pipe 244 e, the MFC 244 g and the valve 244 h.

A fourth carrier gas supply unit mainly includes a fourth carrier gassupply pipe 247 e, an MFC 247 g and a valve 247 h. The fourth carriergas supply unit may be included in a second reactive gas supply unit.

[Second Purge Gas Supply Unit]

A second purge gas source 245 f, an MFC 245 g and a valve 245 h aresequentially installed at a second purge gas supply pipe 245 e, whichconstitutes a second purge gas supply unit, from the upstream direction.

An inert gas is supplied as a purge gas from the second purge gas source245 f and supplied to the flank gas introduction port 241 c via the MFC245 g, the valve 245 h and the second purge gas supply pipe 245 e.

Here, the inert gas is, for example, nitrogen (N₂) gas. In addition tothe N₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne)gas, or argon (Ar) gas may be used as the inert gas.

A second purge gas supply unit (which is also referred to as a purge gassupply unit) mainly includes the second purge gas supply pipe 245 e, theMFC 245 g and the valve 245 h.

[Cleaning Gas Supply Unit]

A cleaning gas source 248 b, an MFC 248 c, a valve 248 d and a remoteplasma unit (RPU) 250 b are sequentially installed at the cleaning gassupply pipe 248 a from the upstream direction.

A cleaning gas is supplied from the cleaning gas source 248 b, andsupplied to the gas rectification unit 234 via the MFC 248 c, the valve248 d, the RPU 250 b, the cleaning gas supply pipe 248 a and the commongas supply pipe 242.

A downstream end of a fifth carrier gas supply pipe 249 a is connectedto the cleaning gas supply pipe 248 a at a downstream side of the valve248 d. A fifth carrier gas source 249 b, an MFC 249 c and a valve 249 dare sequentially installed at the fifth carrier gas supply pipe 249 afrom the upstream direction.

A cleaning gas supply unit mainly includes the cleaning gas supply pipe248 a, the MFC 248 c, and the valve 248 d. The cleaning gas source 248b, the fifth carrier gas supply pipe 249 a and the RPU 250 b may beincluded in the cleaning gas supply unit.

Also, an inert gas supplied from the fifth carrier gas source 249 b maybe supplied to be used as a carrier gas or a dilution gas of a cleaninggas.

A cleaning gas supplied from the cleaning gas source 248 b acts as acleaning gas for removing a by-product attached to the gas rectificationunit 234 or the processing chamber 201 in a cleaning process.

Here, the cleaning gas is, for example, nitrogen trifluoride (NF₃) gas.Also, for example, hydrofluoric acid (HF) gas, chlorine trifluoride(ClF₃) gas, fluorine (F₂) gas, or a combination thereof may be used asthe cleaning gas.

[Control Unit]

As illustrated in FIG. 1, the substrate processing apparatus 100includes a controller 121 configured to control operations of variouselements of the substrate processing apparatus 100.

As illustrated in FIG. 2, the controller 121 which is a control unit(control means) is configured as a computer including a centralprocessing unit (CPU) 121 a, a random access memory (RAM) 121 b, amemory device 121 c and an input/output (I/O) port 121 d. The RAM 121 b,the memory device 121 c and the I/O port 121 d are configured toexchange data with the CPU 121 a via an internal bus 121 e. Thecontroller 121 is configured to be connected to an I/O device 122embodied as, for example, a touch panel or an external memory device283.

The memory device 121 c includes, for example, a flash memory, a harddisk memory (HDD), etc. In the memory device 121 c, a control programfor controlling an operation of a substrate processing apparatus, aprocess recipe including the order or conditions of substrate processingwhich will be described below, and the like is stored to be readable.The process recipe is a combination of sequences of a substrateprocessing process which will be described below to obtain a desiredresult when the sequences are performed by the controller 121, and actsas a program. Hereinafter, the process recipe, the control program, etc.will be referred to together simply as a ‘program.’ Also, when the term‘program’ is used in the present disclosure, it may be understood asincluding only a process recipe, only a control program, or both of theprocess recipe and the control program. The RAM 121 b is configured as amemory area (work area) in which a program or data read by the CPU 121 ais temporarily retained.

The I/O port 121 d is connected to the gate valve 205, the liftingmechanism 218, the pressure adjuster 223, the vacuum pump 224, the RPU250 b, the MFCs 243 c, 243 g, 244 c, 244 g, 245 c, 245 g, 246 c, 246 g,247 c, 247 g, 248 c and 249 c, the valves 243 d, 243 h, 244 d, 244 h,245 d, 245 h, 246 d, 246 h, 247 d, 247 h, 248 d and 249 d, and theheater 213, etc.

The CPU 121 a is configured to read and execute the control program fromthe memory device 121 c and to read the process recipe from the memorydevice 121 c according to a manipulation command input via the I/Odevice 122. According to the read process recipe, the CPU 121 a isconfigured to control opening/closing the gate valve 205; controlupward/downward movement of the lifting mechanism 218; controladjustment of pressure using the pressure adjuster 223; control thevacuum pump 224 to be ‘on’/‘off’; control excitation of a gas using theRPU 250 b; control flow rates of gases using the MFCs 243 c, 243 g, 244c, 244 g, 245 c, 245 g, 246 c, 246 g, 247 c, 247 g, 248 c and 249 c;control gases to be ‘on’/‘off’ using the valves 243 d, 243 h, 244 d, 244h, 245 d, 245 h, 246 d, 246 h, 247 d, 247 h, 248 d and 249 d; andcontrol a temperature control of the heater 213.

The controller 121 is not limited to a dedicated computer and may beconfigured as a general-purpose computer. For example, the controller121 according to the present embodiment may be configured by preparingthe external memory device 283 storing a program as described above,such as a magnetic disk (e.g., a magnetic tape, a flexible disk, a harddisk, etc.), an optical disc (e.g., a compact disc (CD), a digitalversatile disc (DVD), etc.), a magneto-optical (MO) disc, or asemiconductor memory (e.g., a Universal Serial Bus (USB) memory, amemory card, etc.), and then installing the program in a general-purposecomputer using the external memory device 283. However, means forsupplying a program to a computer are not limited to using the externalmemory device 283. For example, a program may be supplied to a computerusing communication means, e.g., the Internet or an exclusive line,without using the external memory device 283. The memory device 121 c orthe external memory device 283 may be configured as a non-transitorycomputer-readable recording medium. Hereinafter, the memory device 121 cand the external memory device 283 may also be referred to togethersimply as a ‘recording medium.’ When the term ‘recording medium’ is usedin the present disclosure, it may be understood as only the memorydevice 121 c, only the external memory device 283, or both of the memorydevice 121 c and the external memory device 283.

(2) Substrate Processing Process

Next, a process of forming a silicon nitride (Si_(x)N_(y)) film usingDCS gas and ammonia (NH₃) gas which is a process of manufacturing asemiconductor device will be described as an example of a substrateprocessing process.

FIG. 3 is a sequence diagram of a substrate processing process performedby substrate processing apparatus according to an embodiment of thepresent invention. In FIG. 3, sequences of a process of forming asilicon nitride (Si_(x)N_(y)) film on the wafer 200 as a substrate byperforming a treatment using plasma are illustrated.

[Substrate Loading Process (Operation S201)]

In order to form a film, first, the wafer 200 is loaded into theprocessing chamber 201. In detail, the substrate support unit 210 ismoved downward by the lifting mechanism 218 such that the lift pins 207protrude from an upper surface of the substrate support unit 210 via thethrough-holes 214. Also, the inside of the processing chamber 201 isregulated to have a predetermined pressure, and the gate valve 205 isopened to place the wafer 200 on the lift pins 207 via the gate valve205. After the wafer 200 is placed on the lift pins 207, the substratesupport unit 210 is moved upward to a predetermined position by thelifting mechanism 218 to place the wafer 200 on the substrate supportunit 210 from the lift pins 207.

[Pressure Reducing & Temperature Raising Process (Operation S202)]

Then, the inside of the processing chamber 201 is exhausted via theexhaust pipe 222 such that the inside of the processing chamber 201 hasa predetermined pressure (degree of vacuum). In this case, the degree ofopenness of an APC valve as the pressure adjuster 223 is feedbackcontrolled based on a pressure measured by a pressure sensor. Also, theamount of electric power to be supplied to the heater 213 is feedbackcontrolled based on a temperature sensed by a temperature sensor (notshown) such that the inside of the processing chamber 201 has apredetermined temperature. In detail, a susceptor is heated beforehandand allowed to stand for a predetermined time after which thetemperature of the wafer 200 or the susceptor is constantly maintained.During this operation, moisture remaining in the processing chamber 201,a gas escaped from a member, etc. is removed by vacuum exhaustion or bypurging performed by supplying N₂ gas, thereby completing a priorpreparation for a film forming process.

After the prior preparation for the film forming process is completed, aprocess gas supply process (operation S203), a purging process(operation S204), a reactive gas supply process (operation S205) and apurging process (operation S206) are performed.

[Process Gas Supply Process (Operation S203)]

Next, as illustrated in FIG. 4, DCS gas is supplied as a first processgas (source gas) into the processing chamber 201 via the first processgas supply unit. Also, the inside of the processing chamber 201 iscontinuously exhausted using the exhaust system to control the insidepressure of the processing chamber 201 to be equal to a predeterminedpressure (first pressure). In detail, the valve 243 d of the firstprocess gas supply pipe 243 a and the valve 246 d of the first carriergas supply pipe 246 a are opened to supply the DCS gas into the firstprocess gas supply pipe 243 a and N₂ gas into the first carrier gassupply pipe 246 a. The DCS gas is supplied via the first process gassupply pipe 243 a and the flow rate of the DCS gas is adjusted by theMFC 243 c. The N₂ gas is supplied via the first carrier gas supply pipe246 a and the flow rate of the N₂ gas is adjusted by the MFC 246 c. Theflow-rate adjusted DCS gas is mixed with the flow-rate adjusted N₂ gasin the first process gas supply pipe 243 a, supplied into the processingchamber 201 via the gas rectification unit 234, and exhausted via theexhaust pipe 222. In this case, in the processing chamber 201, the firstprocess gas supplied from a center portion of the gas rectification unit234 is supplied at a high density to a center portion of the wafer 200,supplied at a low density to a peripheral portion of the wafer 200,compared to the center portion of the wafer 200, and exhausted via theexhaust pipe 222. A process gas supplied from a peripheral portion ofthe gas rectification unit 234 is supplied to the peripheral portion ofthe wafer 200 and exhausted via the exhaust pipe 222.

Also, DCS gas is supplied as a second process gas into the processingchamber 201 via the flank gas introduction port 241 b. In detail, thevalve 243 h of the second process gas supply pipe 243 e and the valve246 h of the third carrier gas supply pipe 246 e are opened to supplythe DCS gas to the second process gas supply pipe 243 e and N₂ gas tothe third carrier gas supply pipe 246 e. The DCS gas is supplied via thesecond process gas supply pipe 243 e and the flow rate of the DCS signalis adjusted by the MFC 243 g. The N₂ gas is supplied via the thirdcarrier gas supply pipe 246 e and the flow rate of the N₂ gas isadjusted by the MFC 246 g. The flow-rate adjusted DCS gas is mixed withthe flow-rate adjusted N₂ gas in the second process gas supply pipe 243e, supplied into the heated or pressure-reduced processing chamber 201via the flank gas introduction port 241 b, and exhausted via the exhaustpipe 222. Here, most of the second process gas does not reach the centerportion of the wafer 200 and flows to the exhaust pipe 222.

Also, the supply state of the second process gas supplied to the centerportion of the wafer 200 may be controlled by adjusting the height ofthe substrate placing table 212. The concentration of a gas supplied tothe peripheral portion of the wafer 200 may be increased by moving theplacing surface 211 of the substrate placing table 212 upward to thevicinity of a lower end of the flank gas introduction port 241 c. Theconcentration of the gas supplied to the peripheral portion of the wafer200 may be reduced to be lower than that of the gas supplied to thecenter portion of the wafer 200 and the concentration of the gassupplied to the center portion of the wafer 200 may be increased bymoving the substrate placing table 212 downward.

In this case, the first process gas may be supplied simultaneously withthe second process gas.

In the present embodiment, a supply amount means a gas flow rate.

In this case, the DCS gas is supplied to the wafer 200 [source gas (DCS)supply process]. The DCS gas is supplied into the processing chamber 201at a predetermined pressure (first pressure, e.g., in a range of 100 Pato 10,000 Pa). The DCS gas is supplied to the wafer 200 under thiscondition. By supplying the DCS gas, a silicon-containing layer isadsorbed (chemically or physically adsorbed) onto the wafer 200. Thesilicon-containing layer means a layer containing either silicon (Si) orsilicon and chlorine (Cl).

Also, by supplying the first process gas in a larger amount than thesecond process gas, the silicon-containing layer is more thickly formedon the center portion of than on the peripheral portion of the wafer200.

[Purging Process (Operation S204)]

After the silicon-containing layer is adsorbed onto the wafer 200, thevalve 243 d of the first process gas supply pipe 243 a and the valve 243h of the second process gas supply pipe 243 e are closed to stop thesupply of the DCS gas. In this case, the pressure adjuster 223 of theexhaust pipe 222 is fully opened to vacuum-exhaust the inside of theprocessing chamber 201 with the vacuum pump 224, and the DCS gas (thatdid not react or after contributing to the formation of thesilicon-containing layer) remaining in the processing chamber 201 iseliminated from the inside of the processing chamber 201. Also, thevalve 245 d of the first purge gas supply unit may be opened to supplyan inert gas into the first purge gas supply pipe 245 a and a gasflowing in the processing chamber 201 may be extruded via the gasrectification unit 234. The flow rate of the inert gas flowing throughthe first purge gas supply pipe 245 a is controlled by the MFC 245 c.Here, in the processing chamber 201, a first purge gas supplied from acenter portion of the gas rectification unit 234 is supplied to thecenter portion of the wafer 200, supplied to the peripheral portion ofthe wafer 200, and exhausted via the exhaust pipe 222. The first purgegas supplied from a peripheral portion of the gas rectification unit 234is supplied to the peripheral portion of the wafer 200 and exhausted viathe exhaust pipe 222.

Also, the valve 245 h of the second purge gas supply unit is opened tosupply an inert gas to the second purge gas supply pipe 245 e and a gasflowing in the processing chamber 201 is extruded via the flank gasintroduction port 241 c. The flow rate of the inert gas flowing throughthe second purge gas supply pipe 245 e is controlled by the MFC 245 g.

Also, N₂ gas may be continuously supplied as an inert gas into theprocessing chamber 201 while the valve 246 d and the valve 246 h areopen. The N₂ gas that is continuously supplied via the valve 246 d andthe valve 246 h acts as a purge gas. Due to the N₂ gas, the firstprocess gas supply pipe 243 a, the common gas supply pipe 242 and thesecond process gas supply pipe 243 e, an effect of eliminating the DCSgas (that did not react or after contributing to the formation of thesilicon-containing layer) remaining in the processing chamber 201 may begreatly increased.

Also, in this case, a gas remaining in the processing chamber 201, thegas rectification unit 234, the flank gas introduction port 241 b, etc.is preferably completely eliminated but may not be completely purged(the inside of the processing chamber 201 may not be completely purged).

In this case, the temperature of the heater 213 is set to be maintainedat a temperature that is in a range of 300° C. to 650° C., preferably, arange of 300° C. to 600° C., and more preferably, a range of 300° C. to550° C., similar to when a source gas is supplied to the wafer 200. Theflow rate of the N₂ gas supplied as a purge gas via each inert gassupply unit is set, for example, to be in a range of 100 sccm to 20,000sccm. In addition to the N₂ gas, a rare gas such as Ar, He, Ne, or Xemay be used as the purge gas.

[Reactive Gas Supply Process (Operation S205)]

After the DCS gas remaining in the processing chamber 201 is removed,the supply of the purge gas is stopped and NH₃ gas is supplied as afirst reactive gas. Also, the inside of the processing chamber 201 iscontinuously exhausted by the exhaust system to control the insidepressure of the processing chamber 201 to be equal to a predeterminedpressure (a second pressure). In detail, the valve 244 d of the firstreactive gas supply pipe 244 a is opened to supply NH₃ gas into thefirst reactive gas supply pipe 244 a. The NH₃ gas is supplied via thefirst reactive gas supply pipe 244 a and the flow rate thereof isadjusted by the MFC 244 c. The flow-rate adjusted NH₃ gas is suppliedinto the processing chamber 201 via the gas rectification unit 234 andexhausted via the exhaust pipe 222. In this case, in the processingchamber 201, the first reactive gas supplied from the center portion ofthe gas rectification unit 234 is supplied at a high concentration tothe center portion of the wafer 200, supplied to the peripheral portionof the wafer 200, and exhausted via the exhaust pipe 222. The firstreactive gas supplied from the peripheral portion of the gasrectification unit 234 is supplied to the peripheral portion of thewafer 200 and exhausted via the exhaust pipe 222.

Also, NH₃ gas is supplied as a second reactive gas via the flank gasintroduction port 241 c. In detail, the valve 244 h of the secondreactive gas supply pipe 244 e is opened to supply the NH₃ gas into thesecond reactive gas supply pipe 244 e. The flow rate of the NH₃ gas isadjusted by the MFC 244 c and the flow-rate adjusted NH₃ gas flows intothe second reactive gas supply pipe 244 e. The flow-rate adjusted NH₃gas is supplied into the processing chamber 201 which is in areduced-pressure state via the flank gas introduction port 241 c, andexhausted via the exhaust pipe 222. Here, the second reactive gas issupplied such that an effect of supplying the second reactive gas islower than that of supplying the first reactive gas. The effect ofsupplying the first reactive gas means an effect of causing thethickness of a film on the center portion of the wafer 200 to be thickerthan that of the film on the peripheral portion of the wafer 200. Theeffect of supplying the second reactive gas means an effect of causingthe thickness of a film on the center portion of the wafer 200 to bethinner than that of the film on the peripheral portion of the wafer200. Also, an effect of supplying a gas may be understood as affectingnot only the thickness of a film on the center portion and theperipheral portion of the wafer 200 but also the quality of the film onthe center portion of the wafer 200 and the peripheral portion of thewafer 200 to be different.

Also, the supply state of the second reactive gas supplied to the wafer200 may be controlled by adjusting the height of the substrate placingtable 212. The concentration of a gas to be supplied to the peripheralportion of the wafer 200 may be improved by moving the placing surface211 of the substrate placing table 212 upward to the vicinity of a lowerend of the flank gas introduction port 241 c, and may be reduced to belower than the concentration of the gas to be supplied to the centerportion of the wafer 200 by moving the substrate placing table 212downward so as to increase the concentration of the gas at the centerportion of the wafer 200.

The NH₃ gas supplied to the wafer 200 reacts with the silicon-containinglayer formed on the wafer 200 to nitridate silicon and dischargeimpurities such as hydrogen, chlorine, hydrogen chloride, etc. Adistribution of the degree of the reaction occurring on the wafer 200may be controlled by adjusting the location of the substrate placingtable 212, the amount of the first reactive gas supplied from an upwarddirection, and the amount of the first reactive gas supplied from alateral direction.

[Purging Process (Operation S206)]

After the reactive gas supply process, the supply of the reactive gas isstopped and a purging process is performed similar to the purgingprocess (operation S204). By performing the purging process, the NH₃ gas(that did not react or after contributing to the nitriding of thesilicon) remaining in the first reactive gas supply pipe 244 a, thecommon gas supply pipe 242, the second reactive gas supply pipe 244 e,the processing chamber 201, etc. may be eliminated. By eliminating theresidual gas, an undesired film may be suppressed from being formed dueto the residual gas.

[Repetitive Process (Operation S207)]

A silicon nitride (Si_(x)N_(y)) layer is deposited on the wafer 200 at apredetermined thickness by performing the process gas supply process(operation S203), the purging process (operation S204), the reactive gassupply process (operation S205), and the purging process (operationS206) once. By repeatedly performing these processes, the thickness ofthe silicon nitride layer formed on the wafer 200 may be controlled.These processes may be repeatedly performed a predetermined number oftimes until the thickness of the silicon nitride layer becomes equal toa desired level.

[Substrate Unloading Process (Operation S208)]

After these processes are repeatedly performed the predetermined numberof times in the repetitive process (operation S207), a substrateunloading process (operation S208) is performed to unload the wafer 200from the processing chamber 201. In detail, the temperature of the wafer200 is lowered to a temperature sufficient for the wafer 200 to beunloaded, and the inside of the processing chamber 201 is purged usingan inert gas and regulated to a pressure sufficient for transfer. Afterthe pressure regulation, the substrate support unit 210 is moveddownward by the lifting mechanism 218, the lift pins 207 protrude viathe through-holes 214, and then the wafer 200 is placed on the lift pins207. After the wafer 200 is placed on the lift pins 207, the gate valve205 is opened to unload the wafer 200 from the processing chamber 201.

(3) Effects of the Present Embodiment

According to the present embodiment, the following one or more effectscan be achieved.

(a) A thickness distribution of a film formed on a substrate, a qualitydistribution of the film, or both of the thickness distribution and thequality distribution may be set to be different at a center portion anda peripheral portion of the substrate. For example, a film having a filmthickness distribution as illustrated in FIG. 5 may be formed. In thegas supply sequence according to the previous embodiment illustrated inFIG. 4, an effect of supplying a gas from above the wafer 200 may beincreased and a film having the film thickness distribution A of FIG. 5(in which a center portion of a substrate is thicker and a peripheralportion of the substrate is thinner) may be formed. When an effect ofsupplying a gas from a lateral direction with respect to the wafer 200is increased, a film having a film thickness distribution B (in which acenter portion of a substrate is thinner and a peripheral portion of thesubstrate is thicker) may be formed. Here, the effect of supplying a gasmeans an effect of causing one or both of a film thickness distributionand a film quality distribution to be different at the center portionand the peripheral portion of the substrate.

(b) The quality of a film formed on a center portion and a peripheralportion of a substrate may be set to be different. For example, thefeatures of a film, such as a density, a crystalline property, acomposition, a resistivity, film stress, an electric property, apermittivity, etc., may be set at the center portion and the peripheralportion of the substrate.

(c) By activating a reactive gas, the difference between the thicknessesor qualities of a film formed on the center portion and the peripheralportion of the wafer 200 may be increased.

(d) By activating the reactive gas using a coil, the states of activespecies on the center portion and the peripheral portion of the wafer200 may be set to be different.

Although a gas supply sequence in which a film is formed such that thethicknesses thereof are different at the center portion and theperipheral portion of the wafer 200 are different has been describedabove, the present invention is not limited thereto and the followingsequences may be used.

For example, a gas supply sequence illustrated in FIG. 6 may be used. Asillustrated in FIG. 6, in the reactive gas supply process (operationS205), an effect of supplying a first reactive gas is set to be lowerthan an effect of supplying a second reactive gas so as to increase aneffect of supplying a process gas from a lateral direction with respectto the wafer 200. A film having the film thickness distribution Billustrated in FIG. 5 may be formed using such a gas supply method.Here, for example, the flow rate of the first reactive gas is set to beless than that of the second reactive gas so that the effect ofsupplying the first reactive gas may be lower than the effect ofsupplying the second reactive gas.

Also, a gas supply sequence illustrated in FIG. 7 may be used. Asillustrated in FIG. 7, a film having the film thickness distribution Aof FIG. 5 may be formed by setting an effect of supplying a firstprocess gas and an effect of supplying a second process gas to be thesame in the process gas supply process (operation S203), setting aneffect of supplying a first purge gas and an effect of supplying asecond purge gas to be the same in the purging processes (operationsS204 and S206), and setting an effect of supplying a first reactive gasand an effect of supplying a second reactive gas to be the same in thereactive gas supply process (operation S205) so as to increase thedegree of reaction at the center portion of the wafer 200. Here, forexample, the flow rate of the first reactive gas is set to be higherthan that of the second reactive gas so that the effect of supplying thefirst reactive gas may be greater than the effect of supplying thesecond reactive gas.

Also, a gas supply sequence illustrated in FIG. 8 may be used. Asillustrated in FIG. 8, an effect of supplying a reactive gas to theperipheral portion of the wafer 200 may be adjusted to be greater thanan effect of supplying the reactive gas to the center portion of thewafer 200 by setting a duration of supplying the first reactive gas tobe shorter than a duration of supplying the second reactive gas in thereactive gas supply process (operation S205), thereby forming a filmhaving the film thickness distribution B of FIG. 5.

Although the processes of sequentially supplying gases have beendescribed in the previous embodiment, the present invention is notlimited thereto and gases supplied in one or both of the process gassupply process (operation S203) and the reactive gas supply process(operation S205) may be activated using the coil 250 a as an activationunit. In particular, as illustrated in each of the sequence diagramsherein, the reactive gas supplied in the reactive gas supply process(operation S205) may be activated to generate active species havingdifferent activities at the center portion of the wafer 200 and causethe reactivity of each of the process gas and the reactive gas to bedifferent at the center portion and the peripheral portion of the wafer200. Accordingly, the difference between the thicknesses of a filmformed on the center portion and the peripheral portion of the wafer 200may be increased. For example, as illustrated in FIG. 11, a film havingthe film thickness distribution A of FIG. 5 may be easily formed whengases are set to be activated only when a first reactive gas issupplied, and a film having the film thickness distribution B of FIG. 5may be easily formed when gases are set to be activated only when asecond reactive gas is supplied,

Second Embodiment

Although the first embodiment has been described above in detail, thepresent invention is not limited thereto and may be embodied in variousforms without departing from the scope of the invention. For example, anembodiment of FIG. 9 may be accomplished.

Referring to FIG. 9, a coil 250 a is configured to beupwardly/downwardly movable. The coil 250 a may be moved upward/downwardby moving an elevator 250 g upward/downward by connecting the coil 250 aand a matching box 250 f to the elevator 250 g.

For example, when the coil 250 a is moved upward in a state in whichpredetermined conditions of supplying a first reactive gas and a secondreactive gas are set, the efficiency of processing the center portion ofthe wafer 200 is greater than the efficiency of processing theperipheral portion of the wafer 200 and thus the thickness of the filmon the center portion of the wafer 200 increases, thereby forming a filmhaving the film thickness distribution A of FIG. 5. When the coil 250 ais moved downward, the efficiency of processing the peripheral portionof the wafer 200 increases to increase the thickness of a film formed onthe peripheral portion of the wafer 200, thereby forming a film havingthe film thickness distribution B of FIG. 5. As described above, a filmthickness distribution may be controlled by changing the location of thecoil 250 a.

Although one coil is installed and moved here, the present invention isnot limited thereto and a plurality of coils may be installed in adirection perpendicular to the wafer 200 and selectively used to controla film thickness distribution. Otherwise, a combination of the gassupply sequences described above may be used to control the thickness ofa film at the center portion and the peripheral portion of the wafer200.

Third Embodiment

Although the second embodiment has been described above in detail, thepresent invention is not limited thereto and may be embodied in variousforms without departing from the scope of the invention.

The inventors of the present invention have found that since plasma wasconcentrated near an outer circumference of the processing chamber 201(the coil 250 a) in a plasma device using a coil as described above, theperipheral portion of the wafer 200 was easily processed to cause a filmto be thickly formed on the peripheral portion compared to the centerportion of the wafer 200, and the quality of the film was likely to bechanged to make it difficult to control the center portion of the wafer200. The quality of the film may be determined by, for example,permittivity, resistivity, etc. Thus, the inventors have conducted astudy and found that a center portion of a substrate can be easilycontrolled by adjusting a distribution of plasma using a structure asillustrated in FIG. 10 or 11.

Referring to FIGS. 10 and 11, a plasma adjusting electrode 250 h isinstalled to control a distribution of plasma. The plasma adjustingelectrode 250 h is configured to be upwardly/downwardly movable by anelevator 250 m including a motor 250 i and a pillar 250 j. For example,as illustrated in FIGS. 10 and 11, the plasma adjusting electrode 250 his connected to a coil 250 a through a switch 250 k and an electricpotential adjustment condenser 250L.

When the switch 250 k is ‘on’, a capacitive coupling occurs among theplasma adjusting electrode 250 h and the plasma and the coil 250 a toinduce plasma generated near the coil 250 a to the plasma adjustingelectrode 250 h. Thus, plasma may be generated to the top of the centerportion of the wafer 200, thereby improving the activity of the centerportion of the wafer 200. Also, the electric potential adjustmentcondenser 250L may be controlled to control a state of the plasmainduced to the plasma adjusting electrode 250 h. Furthermore, theplasma-induced state may be controlled by operating the elevator 250 mto move the plasma adjusting electrode 250 h in an upward/downwarddirection.

For example, as illustrated in FIG. 10, when the plasma adjustingelectrode 250 h is moved downward to the processing chamber 201, plasmamay be induced near the top of the center portion of the wafer 200 toincrease the density of the plasma on the center portion of the wafer200. In this case, a film having the film thickness distribution A ofFIG. 5 may be easily formed. Also, as illustrated in FIG. 11, when theplasma adjusting electrode 250 h is moved upward, plasma may beconcentrated near the coil 250 a to reduce the concentration of theplasma on the center portion of the wafer 200. It this state, a filmhaving the film thickness distribution B of FIG. 5 may be easily formed.

Also, for example, plasma may be induced to the center portion of thewafer 200 by reducing an impedance between the plasma adjustingelectrode 250 h and the coil 250 a by controlling the electric potentialadjustment condenser 250L, and may be concentrated on the peripheralportion of the wafer 200 by increasing the impedance between the plasmaadjusting electrode 250 h and the coil 250 a. Thus, a film having thefilm thickness distribution A or B of FIG. 5 may be formed.

Also, a film thickness distribution may be finely controlled byadjusting each of the heights of the switch 250 k, the electricpotential adjustment condenser 250L and the plasma adjusting electrode250 h.

Also, when the plasma adjusting electrode 250 h is installed outside theprocess container 202, a plasma generation region may be controlledwithout influencing the flow of a gas in the process container 202.

Also, the plasma adjusting electrode 250 h may be used to control adistribution of radicals or ions of a reactive gas that are in variousenergy states in the processing chamber 201.

Although various embodiments of the present invention have beendescribed above, the present invention is not limited thereto and may beembodied in various forms without departing from the scope of theinvention.

Although a process of manufacturing a semiconductor device has beendescribed above, embodiments of the present invention are not limitedthereto. For example, the present invention is applicable to a processof manufacturing a liquid crystal device, a plasma treatment to beperformed on a ceramic substrate, etc.

Although a method of forming a film by alternately supplying a processgas and a reactive gas has been described above, the present inventionis not limited thereto. For example, the process gas and the reactivegas may be supplied such that pulse timings thereof overlap.

Also, the process gas and the reactive gas may be continuously suppliedto form a film by CVD.

Although a process of forming a film has been described above, thepresent invention is not limited thereto. For example, the presentinvention is applicable to a substrate processing process in which afilm formed on a surface of or on a substrate using one or both of asource gas and a reactive gas is plasma-oxidized or plasma-nitridated.Also, the present invention is applicable to a substrate processingprocess in which a thermal treatment using a gaseous reaction or plasmaannealing is performed using one or both of the source gas and thereactive gas. In particular, when a plasma treatment is performed at lowtemperatures, the center portion and the peripheral portion of the wafer200 may be differently processed.

Also, although a method of differently processing the center portion andthe peripheral portion of the wafer 200 to be nonuniform has beendescribed above, the present invention is not limited thereto and asupply rate of gases may be controlled to uniformly process the centerportion and the peripheral portion of the wafer 200.

Although a process of forming a film on the center portion and theperipheral portion of the wafer 200 to different thicknesses has beendescribed above, the present invention is not limited thereto. Forexample, a two-step process may be set such that a film having a uniformthickness is formed in a first step and a film is formed on the centerportion and the peripheral portion of the wafer 200 in differentthicknesses or qualities in a second step.

For example, as illustrated in FIG. 12, a film may be formed byperforming a first step including a first cycle to an n^(th) cycle and asecond step including an (n+1)^(th) cycle to an m^(th) cycle, therebyforming the film having thick peripheral portions as illustrated in FIG.14B.

Also, for example, as illustrated in FIG. 13, in the apparatus of FIG.10 or 11, a film as illustrated in FIG. 14A may be formed by setting thedistance between the plasma adjusting electrode 250 h and the wafer 200to be different in a first step (including a first cycle to an n^(th)cycle) and a second step (including an (n+1)^(th) cycle to an m^(th)cycle) so that the distance may be shorter in the second step than inthe first step.

In FIGS. 14A and 14B, a film 200 a is formed in the first step and films200 b and 200 c are formed in the second step.

Although a gas supply method or the distance between the plasmaadjusting electrode 250 h and the wafer 200 is set to be different inthe first step and the second step, the present invention is not limitedthereto and the gas supply method may be set to be different inarbitrary cycles. For example, a gas supply method or the distancebetween the plasma adjusting electrode 250 h and the wafer 200 may beset to be different in odd-numbered cycles and even-numbered cycles.

Although the plasma adjusting electrode 250 a has a hemispherical shapein the previous embodiments, the plasma adjusting electrode 250 a mayhave a plate shape and an upper portion of the process container 202 mayalso have a flat shape.

Also, a combination of at least two patterns among the gas supplypatterns described above with reference to FIGS. 4, 6 to 8, 12, and 13may be used in every cycle. By combining the gas supply patterns, a filmthickness/quality distribution of a film to be formed on the wafer 200may be tuned in a direction of a plane or the quality of the film may becontrolled in a direction of the thickness of the film.

Also, although a method of controlling the amount (the flow rate orsupply duration) of the reactive gas has been described in the previousembodiments, the amount of the process gas may be controlled accordingto the sequence of FIG. 15. Also, the sequence of FIG. 15 may becombined with the sequence of controlling the amount of the reactive gasdescribed above. When a film thickness/quality distribution iscontrolled by adjusting the amount of the process gas, the distancebetween each gas supply port and the wafer 200 is preferably set to beshort.

Also, although the reactive gas is supplied after the process gas issupplied in the previous embodiments, the process gas may be suppliedafter the reactive gas is supplied.

In a substrate processing apparatus, a method of manufacturing asemiconductor device and a non-transitory computer readable recordingmedium according to the one or more aspects of the present invention, afilm may be formed on a substrate to have different film thicknesses andfeatures within a plane of the substrate and the manufacturingthroughput can be improved.

EXEMPLARY EMBODIMENTS OF THE PRESENT INVENTION

Exemplary embodiments of the present invention will be supplementarilyadded below.

Supplementary Note 1

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a processing chamberaccommodating a substrate; a first process gas supply unit configured tosupply a first process gas from above the substrate; a first reactivegas supply unit configured to supply a first reactive gas from above thesubstrate; a second process gas supply unit configured to supply asecond process gas from a lateral direction with respect to thesubstrate; a second reactive gas supply unit configured to supply asecond reactive gas from the lateral direction with respect to thesubstrate; and a control unit configured to control the first processgas supply unit, the second process gas supply unit, the first reactivegas supply unit, and the second reactive gas supply unit to: (a) supplythe first process gas from above the substrate and the second processgas from the lateral direction with respect to the substrate; and (b)supply the first reactive gas from above the substrate and the secondreactive gas from the lateral direction with respect to the substrate,wherein each of the steps (a) and (b) is performed at least once in amanner that: a total amount of the first process gas and the secondprocess gas supplied to a center portion of the substrate is differentfrom that of the first process gas and the second process gas suppliedto a peripheral portion of the substrate; or a total amount of the firstreactive gas and the second reactive gas supplied to the center portionof the substrate is different from that of the first reactive gas andthe second reactive gas supplied to the peripheral portion of thesubstrate in at least one of the steps (a) and (b).

Supplementary Note 2

In the substrate processing apparatus of Supplementary note 1, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that the totalamount of the first process gas and the second process gas supplied tothe center portion of the substrate is greater than that of the firstprocess gas and the second process gas supplied to the peripheralportion of the substrate in the step (b).

Supplementary Note 3

In the substrate processing apparatus of Supplementary note 1 or 2, thecontrol unit is preferably configured to control the first reactive gassupply unit and the second reactive gas supply unit such that the totalamount of the first reactive gas and the second reactive gas supplied tothe center portion of the substrate is greater than that of the firstreactive gas and the second reactive gas supplied to the peripheralportion of the substrate in the step (b).

Supplementary Note 4

In the substrate processing apparatus of Supplementary note 1, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that the totalamount of the first process gas and the second process gas supplied tothe center portion of the substrate is less than that of the firstprocess gas and the second process gas supplied to the peripheralportion of the substrate in the step (b).

Supplementary Note 5

In the substrate processing apparatus of Supplementary note 1, 2, or 4,the control unit is preferably configured to control the first reactivegas supply unit and the second reactive gas supply unit such that thetotal amount of the first reactive gas and the second reactive gassupplied to the center portion of the substrate is less than that of thefirst reactive gas and the second reactive gas supplied to theperipheral portion of the substrate in the step (b).

Supplementary Note 6

The substrate processing apparatus of any one of Supplementary notes 1to 5, preferably further including a substrate support unit configuredto support the substrate, and wherein the control unit is preferablyconfigured to control the substrate support unit to be moved upward ordownward, such that one of the total amounts of the first process gasand the second process gas supplied to the center portion and theperipheral portion of the substrate and the total amounts of the firstreactive gas and the second reactive gas supplied to the center portionand the peripheral portion of the substrate is different from the other.

Supplementary Note 7

The substrate processing apparatus of any one of Supplementary notes 1to 6, preferably further including an activation unit configured toexcite the first reactive gas and the second reactive gas.

Supplementary Note 8

According to another aspect of the present invention, there is provideda substrate processing apparatus including: a processing chamberaccommodating a substrate; a first process gas supply unit configured tosupply a first process gas from above the substrate; a first reactivegas supply unit configured to supply a first reactive gas from above thesubstrate; a second process gas supply unit configured to supply asecond process gas from a lateral direction with respect to thesubstrate; a second reactive gas supply unit configured to supply asecond reactive gas from the lateral direction with respect to thesubstrate; and a control unit configured to control the first processgas supply unit, the second process gas supply unit, the first reactivegas supply unit, and the second reactive gas supply unit to alternatelysupply the first process gas, the second process gas, the first reactivegas, and the second reactive gas by setting at least one among an amountof the first process gas, an amount of the second process gas, an amountof the first reactive gas, and an amount of the second reactive gas tobe different from the other.

Supplementary Note 9

In the substrate processing apparatus of Supplementary note 8, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that an effectof supplying the first process gas is greater than an effect ofsupplying the second process gas.

Supplementary Note 10

In the substrate processing apparatus of Supplementary note 9, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that an effectof supplying the first process gas is greater than an effect ofsupplying the second process gas and the amount of the first process gasis greater than the amount of the second process gas.

Supplementary Note 11

In the substrate processing apparatus of Supplementary note 8, thecontrol unit is preferably configured to control the first reactive gassupply unit and the second reactive gas supply unit such that an effectof supplying the first reactive gas contributing to improving a filmthickness distribution or a film quality distribution of a film to beformed on the substrate is greater than an effect of supplying thesecond reactive gas.

Supplementary Note 12

In the substrate processing apparatus of Supplementary note 11, thecontrol unit is preferably configured to control the first reactive gassupply unit and the second reactive gas supply unit such that the amountof the first reactive gas is greater than the amount of the secondreactive gas to cause the effect of supplying the first reactive gas tobe greater than the effect of supplying the second reactive gas.

Supplementary Note 13

In the substrate processing apparatus of Supplementary note 8, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that an effectof supplying the first process gas contributing to improving a filmthickness distribution or a film quality distribution of a film to beformed on the substrate is greater than an effect of supplying thesecond process gas.

Supplementary Note 14

In the substrate processing apparatus of Supplementary note 13, thecontrol unit is preferably configured to control the first process gassupply unit and the second process gas supply unit such that the amountof the first process gas is less than the amount of the second processgas to cause the effect of supplying the first process gas to be lowerthan the effect of supplying the second process gas.

Supplementary Note 15

In the substrate processing apparatus of Supplementary note 8, thecontrol unit is preferably configured to control the first reactive gassupply unit and the second reactive gas supply unit such that an effectof supplying the first reactive gas contributing to improving a filmthickness distribution or a film quality distribution of a film to beformed on the substrate is less than an effect of supplying the secondreactive gas.

Supplementary Note 16

In the substrate processing apparatus of Supplementary note 15, thecontrol unit is preferably configured to control the first reactive gassupply unit and the second reactive gas supply unit such that the amountof the first reactive gas is less than the amount of the second reactivegas to cause the effect of supplying the first reactive gas to be lowerthan the effect of supplying the second reactive gas.

Supplementary Note 17

In the substrate processing apparatus of any one of Supplementary notes1 to 16, the control unit is preferably configured to control the firstreactive gas supply unit and the second reactive gas supply unit tosupply the second reactive gas after the first reactive gas is supplied.

Supplementary Note 18

In the substrate processing apparatus of any one of Supplementary notes1 to 17, the control unit is preferably configured to control the firstreactive gas supply unit and the second reactive gas supply unit tosupply the first reactive gas after the supply of the second reactivegas is stopped.

Supplementary Note 19

The substrate processing apparatus of any one of Supplementary notes 1to 18, preferably further including a plasma adjusting electrodeconfigured to move upward and downward above the processing chamber, andwherein the control unit is preferably configured to control the plasmaadjusting electrode to move upward or downward.

Supplementary Note 20

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, the method including:(a) supplying a first process gas from above a substrate and a secondprocess gas from a lateral direction with respect to the substrate; and(b) supplying a first reactive gas from above the substrate and a secondreactive gas from the lateral direction with respect to the substrate,wherein each of the steps (a) and (b) is performed at least once in amanner that a total amount of the first process gas and the secondprocess gas supplied to a center portion of the substrate is differentfrom that of the first process gas and the second process gas suppliedto a peripheral portion of the substrate; or a total amount of the firstreactive gas and the second reactive gas supplied to the center portionof the substrate is different from that of the first reactive gas andthe second reactive gas supplied to the peripheral portion of thesubstrate in at least one of the steps (a) and (b).

Supplementary Note 21

In the method of Supplementary note 20, in the step (a), the totalamount of the first process gas and the second process gas supplied tothe center portion of the substrate is preferably greater than that ofthe first process gas and the second process gas supplied to theperipheral portion of the substrate.

Supplementary Note 22

In the method of Supplementary note 20 or 21, in the step (b), the totalamount of the first reactive gas and the second reactive gas supplied tothe center portion of the substrate is preferably greater than that ofthe first reactive gas and the second reactive gas supplied to theperipheral portion of the substrate.

Supplementary Note 23

In the method of Supplementary note 20, in the step (a), the totalamount of the first process gas and the second process gas supplied tothe center portion of the substrate is preferably less than that of thefirst process gas and the second process gas supplied to the peripheralportion of the substrate.

Supplementary Note 24

In the method of Supplementary note 20, 21, or 23, in the step (b), thetotal amount of the first reactive gas and the second reactive gassupplied to the center portion of the substrate is preferably less thanthat of the first reactive gas and the second reactive gas supplied tothe peripheral portion of the substrate.

Supplementary Note 25

The method of any one of Supplementary notes 20 to 24, preferablyfurther including moving the substrate upward or downward before thestep (a) or (b).

Supplementary Note 26

The method of any one of Supplementary notes 20 to 25, preferablyfurther including activating the first reactive gas and the secondreactive gas.

Supplementary Note 27

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, the method including:(a) supplying a first process gas from above a substrate and supplying asecond process gas from a lateral direction with respect to thesubstrate such that an amount of the supplied second process gas isdifferent from an amount of the supplied first process gas; (b)supplying a first reactive gas from above the substrate and supplying asecond reactive gas from the lateral direction with respect to thesubstrate such that an amount of the supplied second reactive gas isdifferent from an amount of the supplied first reactive gas; and (c)activating the first reactive gas and the second reactive gas.

Supplementary Note 28

In the method of Supplementary note 27, in the step (a), an effect ofsupplying the first process gas contributing to improving a filmthickness distribution or a film quality distribution of a film to beformed on the substrate is preferably greater than an effect ofsupplying the second process gas.

Supplementary Note 29

In the method of Supplementary note 27 or 28, in the step (b), an effectof supplying the first reactive gas contributing to improving the filmthickness distribution or the film quality distribution of the film tobe formed on the substrate is preferably greater than an effect ofsupplying the second reactive gas.

Supplementary Note 30

In the method of Supplementary note 27, in the step (a), an effect ofsupplying the first process gas contributing to improving a filmthickness distribution or a film quality distribution of a film to beformed on the substrate is preferably less than an effect of supplyingthe second process gas.

Supplementary Note 31

In the method of Supplementary note 27 or 28, in the step (b), an effectof supplying the first reactive gas contributing to improving the filmthickness distribution or the film quality distribution of the film tobe formed on the substrate is preferably less than an effect ofsupplying the second reactive gas.

Supplementary Note 32

In the method of any one of Supplementary notes 27 to 31, in the step(b), the second reactive gas is preferably supplied after the firstreactive gas is supplied.

Supplementary Note 33

In the method of any one of Supplementary notes 27 to 31, in the step(b), the first reactive gas is preferably supplied after the supply ofthe second reactive gas is stopped.

Supplementary Note 34

The method of any one of Supplementary notes 27 to 33, preferablyfurther including moving a plasma adjusting electrode installed abovethe substrate upward or downward before performing the step (c).

Supplementary Note 35

In the method of any one of Supplementary notes 27 to 34, the amount ispreferably a gas flow rate.

Supplementary Note 36

In the method of any one of Supplementary notes 27 to 35, the amount ispreferably a gas supply duration.

Supplementary Note 37

According to another aspect of the present invention, there is provideda program causing a computer to perform: (a) supplying a first processgas from above a substrate and a second process gas from a lateraldirection with respect to the substrate; and (b) supplying a firstreactive gas from above the substrate and a second reactive gas from thelateral direction with respect to the substrate, wherein each of thesequences (a) and (b) is performed at least once in a manner that atotal amount of the first process gas and the second process gassupplied to a center portion of the substrate is different from that ofthe first process gas and the second process gas supplied to aperipheral portion of the substrate; or a total amount of the firstreactive gas and the second reactive gas supplied to the center portionof the substrate is different from that of the first reactive gas andthe second reactive gas supplied to the peripheral portion of thesubstrate in at least one of the sequences (a) and (b).

Supplementary Note 38

According to another aspect of the present invention, there is provideda non-transitory computer readable recording medium causing a computerto perform: (a) supplying a first process gas from above a substrate anda second process gas from a lateral direction with respect to thesubstrate; and (b) supplying a first reactive gas from above thesubstrate and a second reactive gas from the lateral direction withrespect to the substrate, wherein each of the sequences (a) and (b) isperformed at least once in a manner that a total amount of the firstprocess gas and the second process gas supplied to a center portion ofthe substrate is different from that of the first process gas and thesecond process gas supplied to a peripheral portion of the substrate; ora total amount of the first reactive gas and the second reactive gassupplied to the center portion of the substrate is different from thatof the first reactive gas and the second reactive gas supplied to theperipheral portion of the substrate in at least one of the sequences (a)and (b).

Supplementary Note 39

In the non-transitory computer readable recording medium ofSupplementary note 38, in the sequence (a), the total amount of thefirst process gas and the second process gas supplied to the centerportion of the substrate is preferably greater than that of the firstprocess gas and the second process gas supplied to the peripheralportion of the substrate.

Supplementary Note 40

In the non-transitory computer readable recording medium ofSupplementary note 38 or 39, in the sequence (b), the total amount ofthe first reactive gas and the second reactive gas supplied to thecenter portion of the substrate is preferably greater than that of thefirst reactive gas and the second reactive gas supplied to theperipheral portion of the substrate in the sequence (b).

Supplementary Note 41

In the non-transitory computer readable recording medium ofSupplementary note 38, in the sequence (a), the total amount of thefirst process gas and the second process gas supplied to the centerportion of the substrate is preferably less than that of the firstprocess gas and the second process gas supplied to the peripheralportion of the substrate

Supplementary Note 42

In the non-transitory computer readable recording medium ofSupplementary note 38 or 41, in the sequence (b), the total amount ofthe first reactive gas and the second reactive gas supplied to thecenter portion of the substrate is preferably less than that of thefirst reactive gas and the second reactive gas supplied to theperipheral portion of the substrate in the sequence (b).

Supplementary Note 43

The non-transitory computer readable recording medium of any one ofSupplementary notes 38 to 41, preferably further including (c) movingthe substrate upward or downward before the sequence (a) or (b).

Supplementary Note 44

The non-transitory computer readable recording medium of any one ofSupplementary notes 38 to 43, preferably further including (d) excitingthe first reactive gas and the second reactive gas.

What is claimed is:
 1. A method of manufacturing a semiconductor device,comprising: (a) supplying a first process gas from above a substrate anda second process gas from a lateral direction with respect to thesubstrate; and (b) supplying a first reactive gas from above thesubstrate and a second reactive gas from the lateral direction withrespect to the substrate, wherein each of (a) and (b) is performed atleast once in a manner that a total amount of the first process gas andthe second process gas supplied to a center portion of the substrate isdifferent from that of the first process gas and the second process gassupplied to a peripheral portion of the substrate; or a total amount ofthe first reactive gas and the second reactive gas supplied to thecenter portion of the substrate is different from that of the firstreactive gas and the second reactive gas supplied to the peripheralportion of the substrate in at least one of (a) and (b).
 2. The methodof claim 1, wherein the total amount of the first reactive gas and thesecond reactive gas supplied to the center portion of the substrate isgreater than that of the first reactive gas and the second reactive gassupplied to the peripheral portion of the substrate in (b).
 3. Themethod of claim 1, wherein the total amount of the first reactive gasand the second reactive gas supplied to the center portion of thesubstrate is less than that of the first reactive gas and the secondreactive gas supplied to the peripheral portion of the substrate in (b).4. The method of claim 1, wherein (b) comprises: activating the firstreactive gas and the second reactive gas.
 5. The method of claim 1,wherein a supply of the first reactive gas starts after a supply of thesecond reactive gas starts in (b).
 6. The method of claim 1, wherein asupply of the first reactive gas starts after a supply of the secondreactive gas is stopped in (b).
 7. The method of claim 1, wherein anamount of the first process gas supplied in (a) is greater than that ofthe second process gas supplied in (a).
 8. The method of claim 1,wherein an amount of the first process gas supplied in (a) is less thanthat of the second process gas supplied in (a).
 9. The method of claim1, wherein a supply of the first process gas starts after a supply ofthe second process gas starts in (a).
 10. The method of claim 1, whereina supply of the first process gas starts after a supply of the secondprocess gas is stopped in (a).
 11. The method of claim 1, wherein eachof (a) and (b) is performed at least once with a substrate support unitsupporting the substrate elevated, and each of (a) and (b) is performedat least once with the substrate support unit supporting the substratelowered.
 12. The method of claim 1, further comprising: (c) generating aplasma of at least one selected from the group consisting of the firstprocess gas and the second process gas, and wherein each of (a) and (b)is performed at least once while a distance between a plasma adjustingelectrode and the substrate is maintained at a first distance in (c),each of (a) and (b) is performed at least once while the distancebetween a plasma adjusting electrode and the substrate is maintained ata second distance in (c).
 13. The method of claim 12, wherein the seconddistance is shorter than the first distance.